C/C‐SiC component for metallic phase change materials

Metallic resist for phase-change lithography

Currently, the most widely used photoresists in optical lithography are organic-based resists. The major limitations of such resists include the photon accumulation severely affects the quality of photolithography patterns and the size of the pattern is constrained by the diffraction limit. Phase-change lithography, which uses semiconductor-based resists such as chalcogenide Ge₂Sb₂Te₅ films, wa...

Metallic 1T phase MoS2 nanosheets as supercapacitor electrode materials.

Efficient intercalation of ions in layered materials forms the basis of electrochemical energy storage devices such as batteries and capacitors. Recent research has focused on the exfoliation of layered materials and then restacking the two-dimensional exfoliated nanosheets to form electrodes with enhanced electrochemical response. Here, we show that chemically exfoliated nanosheets of MoS2 con...

Nano-Encapsulated Smart Tunable Phase Change Materials

Thermal Transport in Phase Change Memory Materials

Phase change memory uses brief pulses of electrical current to induce phase transitions in chalcogenide material regions with dimensions near or even far below 50 nm. The strongly differing electrical conductivities of the crystalline and amorphous phases allow data storage at densities in excess of terabits per square inch. Nanoscale conduction heat transfer governs the figures of merit in the...

Thermal Management Using “ Dry ” Phase Change Materials

The thermal response characteristic of a hybrid cooler that is charged with a “dry” solid-solid phase change compound is evaluated. A mathematical model that simulates the performance of a cooler/heat storage unit is formulated. A prototype heat sink that incorporates heat storage using a “dry” PCM is tested, and used to benchmark the simulation model. Different heating and cooling strategies a...